2
RF Device Data
Freescale Semiconductor
MRF6S20010NR1 MRF6S20010GNR1
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 78?C, 1 W CW
Case Temperature 79?C, 10 W PEP, Two--Tone Test
R?JC
2.3
2.9
?C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1A
Machine Model (per EIA/JESD22--A115)
A
Charge Device Model (per JESD22--C101)
IV
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
?C
Table 5. Electrical Characteristics
(TA
=25?C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS
=68Vdc,VGS
=0Vdc)
IDSS
—
—
10
?Adc
Zero Gate Voltage Drain Leakage Current
(VDS
=28Vdc,VGS
=0Vdc)
IDSS
—
—
1
?Adc
Gate--Source Leakage Current
(VGS
=5Vdc,VDS
=0Vdc)
IGSS
—
—
500
?Adc
On Characteristics
Gate Threshold Voltage
(VDS
=10Vdc,ID
=40?Adc)
VGS(th)
1.5
2.2
3.5
Vdc
Gate Quiescent Voltage
(VDD
=28Vdc,ID
= 130 mAdc, Measured in Functional Test)
VGS(Q)
2
2.8
4
Vdc
Drain--Source On--Voltage
(VGS
=10Vdc,ID
=0.4Adc)
VDS(on)
—
0.33
0.4
Vdc
Dynamic Characteristics
(3)
Output Capacitance
(VDS
=28Vdc?
30 mV(rms)ac @ 1 MHz, VGS
=0Vdc)
Coss
—
20
—
pF
Reverse Transfer Capacitance
(VDS
=28Vdc?
30 mV(rms)ac @ 1 MHz, VGS
=0Vdc)
Crss
—
11.6
—
pF
Input Capacitance
(VDS
=28Vdc,VGS
=0Vdc?
30 mV(rms)ac @ 1 MHz)
Ciss
—
120
—
pF
Functional Tests
(4)
(In Freescale Test Fixture, 50 ohm system) VDD
=28Vdc,IDQ
= 130 mA, Pout
= 10 W PEP, f1 = 2170 MHz,
f2 = 2170.1 MHz, Two--Tone Test
Power Gain
Gps
14
15.5
17
dB
Drain Efficiency
?D
33
36
—
%
Intermodulation Distortion
IMD
—
-- 3 4
-- 2 8
dBc
Input Return Loss
IRL
—
-- 1 5
-- 9
dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
3. Part internally matched on input.
4. Measurements made with device in straight lead
configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GN) parts.
(continued)
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